2 inch silicon wafer 4H Semi-Insulating
2 inch silicon wafer: In the semiconductor industry, the choice of wafer size is critical to productivity and product performance. Our 2-inch silicon wafers bring new possibilities to semiconductor manufacturing with their unique size advantages.
Compared to other wafer sizes, 2-inch silicon wafers demonstrate superior efficiency in semiconductor wafer-level packaging technology. Their compact size allows more chips to be arranged more tightly in the limited substrate space, thus significantly increasing the package density.
This not only optimizes space utilization in the production process, but also reduces material waste and enables a more environmentally friendly and efficient manufacturing process.
2 inch silicon wafer
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Crystal Structure | Sic | Breakdown Electrical Field(MV/cm) | 3.1 | |
Lattice Constant(nm) | a=3.076Å c=10.053Å | Thermal Conductivity(W/cm.K) | 4.5 | |
Density(g/cm3) | 3.21 | Thermal Expansion | 4.7*10-6/k | |
Melting point(℃) | 2830 | Refractive Index | 2.6767~2.6480 | |
Mohs Hardness(mohs) | 9.2 | Band Gap(eV) | 3.26 | |
Dielectric Constant | 9.66 |
2 inch silicon wafer
In addition, the small size of the 2-inch silicon wafer means that the packaging process is more flexible to respond to a variety of complex environments and needs. After we perform the final packaging process on the substrate, we can easily cut the silicon wafer into individual chips, ensuring that each chip has consistent high performance and reliability.
It is worth mentioning that this 2-inch silicon wafer is also made of silicon carbide (SiC), which inherits all the excellent characteristics of SiC, such as high temperature resistance, high critical breakdown electric field, high electron saturation mobility, and high thermal conductivity. This enables our 2-inch silicon wafers to excel in power, RF, and optoelectronic applications, and can be further fabricated into HEMTs and other microwave RF devices, which are widely used in the fields of information and communication, radio detection, etc., and have even become the main choice of power amplifiers for 5G base stations.
By choosing our 2-inch silicon wafers, you will get a semiconductor product that combines efficient packaging with excellent performance. It’s not just a choice of size, it’s a pursuit of technological innovation and manufacturing efficiency. Let’s work together to create a new chapter in semiconductor technology and open up a highly efficient and reliable future with compact size.
- Wide Range of Applications: These include high-frequency, high-power electronic devices such as Schottky diodes, JFETs, BJTs, and optoelectronic devices like GaN/SiC blue LEDs.
- The advantages are notable: low lattice mismatch, high thermal conductivity, low energy consumption, excellent transient characteristics, and a wide bandgap, making them an ideal choice.
2 inch Diameter 4H Silicon Carbide Substrate Specifications | ||||||
SUBSTRATE PROPERTY | Ultra Grade | Production Grade | Research Grade | Dummy Grade | ||
Diameter | 76.2 mm ±0.38 mm | |||||
Surface Orientation | on-axis: {0001} ± 0.2°; off-axis: 4°toward <11-20> ± 0.5° | |||||
Primary Flat Orientation | <11-20> ± 5.0 ̊ | |||||
Secondary Flat Orientation | 90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up | |||||
Primary Flat Length | 22.0 mm ± 2.0 mm | |||||
Secondary Flat Length | 11.0 mm ± 1.5mm | |||||
Wafer Edge | Chamfer | |||||
Micropipe Density | ≤1 micropipes/ cm2 | ≤5 micropipes/ cm2 | ≤10 micropipes/ cm2 | ≤50 micropipes/ cm2 | ||
Polytype areas by high-intensity light | None permitted | ≤10% area | ||||
Resistivity | 0.015 Ω·cm~0.028 Ω·cm | (area 75%)0.015Ω·cm~0.028 Ω·cm | ||||
Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm | |||||
TTV | ≤10 μm | ≤15 μm | ||||
Bow(absolute value) | ≤15 μm | ≤25 μm | ||||
Warp | ≤35 μm |