3 inch silicon wafer
3 inch silicon wafer: 4H semi-insulating silicon carbide (SiC) wafer is leading the way in next-generation semiconductor technology with its exceptional performance.
As a cutting-edge semiconductor solution, this wafer offers unparalleled physical and chemical stability, and its semi-insulating properties open up new possibilities for the fabrication of power, radio frequency (RF), and optoelectronic devices.
The 3-inch 4H semi-insulating SiC wafer features an advanced tetrahexahedral (4H) crystal structure, ensuring extreme stability and high performance.
Its semi-insulating nature, characterized by high resistance, provides a robust barrier for current isolation, significantly enhancing the efficiency and safety of electronic devices.
3 inch silicon wafer
| 3 inch Diameter 4H Silicon Carbide Substrate Specifications | Primary Flat Length | 22.0 mm ± 2.0 mm | ||||||||
| SUBSTRATE PROPERTY | Ultra Grade | Production Grade | Research Grade | Dummy Grade | ||||||
| Secondary Flat Length | 11.0 mm ± 1.5mm | |||||||||
| Diameter | 76.2 mm ±0.38 mm | |||||||||
| Wafer Edge | Chamfer | |||||||||
| Surface Orientation | on-axis: {0001} ± 0.2°; off-axis: 4°toward <11-20> ± 0.5° | |||||||||
| Micropipe Density | ≤1 micropipes/ cm2 | ≤5 micropipes/ cm2 | ≤10 micropipes/ cm2 | ≤50 micropipes/ cm2 | ||||||
| Primary Flat Orientation | <11-20> ± 5.0 ̊ | |||||||||
| Polytype areas by high-intensity light | None permitted | ≤10% area | ||||||||
| Secondary Flat Orientation | 90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up | |||||||||
| Resistivity | 0.015 Ω·cm~0.028 Ω·cm | (area 75%)0.015Ω·cm~0.028 Ω·cm | ||||||||
| Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm | |||||||||
| Bow(absolute value) | ≤15 μm | ≤25 μm | ||||||||
| TTV | ≤10 μm | ≤15 μm | ||||||||
| Warp | ≤35 μm | |||||||||
3 inch silicon wafer
3 inch silicon wafer
This wafer boasts several impressive technical attributes. Its superior thermal conductivity ensures excellent heat dissipation, even under high-intensity operation, preventing performance degradation due to overheating.
The low conduction loss design reduces energy consumption and significantly increases energy efficiency, aligning with the current trend towards green and sustainable technology.
Additionally, its excellent high-temperature tolerance, along with mechanical and chemical stability, allows the wafer to maintain outstanding performance in extreme working environments.
The 3 inch 4H semi-insulating SiC wafer demonstrates broad applicability across diverse sectors.
In power electronics, it is the preferred material for manufacturing high-performance power switching devices such as MOSFETs, IGBTs, and Schottky diodes.
These SiC-based devices maintain very low conduction and switching losses even under high voltage and high-temperature conditions, thus enhancing both device efficiency and reliability.
In the RF domain, this wafer’s high power and high-frequency characteristics are fully utilized, making it an ideal material for core components like RF power amplifiers, high-precision chip resistors, and filters.
Its excellent electron saturation drift velocity and thermal conductivity ensure stability and efficiency in high-frequency operations.
Similarly, in the optoelectronic sector, the 3-inch 4H semi-insulating SiC wafer shines with its capability to produce high-power laser diodes, high-precision UV detectors, and complex optoelectronic integrated circuits, contributing significantly to advancements in optoelectronic technology.
As the global markets for power electronics, RF, and optoelectronics continue to expand, the demand for high-performance semiconductor materials is rising. The 3-inch 4H semi-insulating SiC wafer, with its exceptional performance and broad application potential, is becoming a key driver in these fields.
It holds the promise of replacing traditional silicon materials, especially in areas such as energy efficiency improvement, electric vehicle adoption, renewable energy development, and communication technology advancements, thereby leading the semiconductor industry to new heights.
Choosing the 3 inch 4H semi-insulating SiC wafer means choosing the forefront of electronic and optoelectronic technology. We believe this high-performance wafer will provide robust technical support and market competitiveness for your business.
Join us now in ushering in a new era for the electronic and optoelectronic industries!
- Wide Range of Applications: These include high-frequency, high-power electronic devices such as Schottky diodes, JFETs, BJTs, and optoelectronic devices like GaN/SiC blue LEDs.
- The advantages are notable: low lattice mismatch, high thermal conductivity, low energy consumption, excellent transient characteristics, and a wide bandgap, making them an ideal choice.