4h-sic wafer

4h-sic wafer

 the size and selection of silicon carbide single crystal substrate wafer
Silicon carbide single-crystal substrate wafer size is diverse, from the diameter of twenty-five millimeters of small wafers to the maximum diameter of 300 mm of large wafers, are widely used.

The 300 mm diameter wafers are particularly suitable for high-end applications such as data centers, contact image sensors or advanced logic devices.

For IoT applications or automotive applications, wafers with a diameter of less than or equal to 200 millimeters are more suitable. Although the diameter of the wafer in millimeters, but the industry is often based on the closest inch size to describe, such as “six-inch factory”.

 

what is silicon substrate

4h-sic wafer