4h silicon wafer
4h silicon wafer DUMMY-grade SiC substrates to infuse unparalleled performance into your high-frequency, high-power electronic devices and advanced optoelectronic devices.
Our professional-grade 4H-N type silicon carbide material is meticulously crafted into top-tier wafers with a diameter of 100mm. These wafers not only offer precise dimensions but also boast exceptional physical properties, making them an ideal choice in the semiconductor device field.
Our 4-inch silicon wafers feature ultra-low lattice mismatch, ensuring device stability and reliability. Their high thermal conductivity effectively dissipates heat, keeping devices cool even under high-load operation.
The low power consumption characteristic helps extend product lifespan while aligning with green and environmental sustainability goals. With excellent transient characteristics and a wide bandgap, these wafers are superior for manufacturing high-frequency, high-power electronic and optoelectronic devices.
4h silicon wafer
![4h sic wafer](https://www.sapphire-wafer.net/wp-content/uploads/2024/06/1718407077576.png)
4h silicon wafer
From Schottky diodes to JFETs, BJTs, PiN diodes, and IGBTs, MOSFETs, our 4-inch silicon wafers provide outstanding performance support for a range of high-frequency, high-power electronic devices.
Additionally, they are extensively used as substrate materials for GaN/SiC blue LEDs, contributing significantly to the advancement of the optoelectronics industry. Choosing our 4-inch DUMMY-grade SiC wafers means choosing professionalism and quality.
We are dedicated to providing you with the highest quality semiconductor materials to enhance your product performance.
Contact us now to place your order and embark on your professional semiconductor journey!
4 inch diameter Silicon Carbide (SiC) Substrate Specification | ||||||
Grade | Zero MPD Grade | Production Grade | Research Grade |
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Diameter | 100.0 mm±0.5 mm | |||||
Thickness | 350 μm±25μm (200-500um thickness also is ok) | |||||
Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI | |||||
Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 |
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Resistivity | 4H-N | 0.015~0.028 Ω•cm | ||||
6H-N | 0.02~0.1 Ω•cm | |||||
4/6H-SI | ≥1E5 Ω·cm | |||||
Primary Flat and length | {10-10}±5.0° ,32.5 mm±2.0 mm | |||||
Secondary Flat Length | 18.0mm±2.0 mm | |||||
Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||||
Edge exclusion | 3 mm | |||||
TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm | |||||
Roughness | Polish Ra≤1 nm ,CMP Ra≤0.5 nm | |||||
Cracks by high intensity light | None | 1 allowed, ≤2 mm |
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Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% |
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Polytype Areas by high intensity light | None | Cumulative area ≤2% |
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Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length |
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edge chip | None | 3 allowed, ≤0.5 mm each |
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Contamination by high intensity light | None |