4h silicon wafer

4h silicon wafer  DUMMY-grade SiC substrates to infuse unparalleled performance into your high-frequency, high-power electronic devices and advanced optoelectronic devices.

Our professional-grade 4H-N type silicon carbide material is meticulously crafted into top-tier wafers with a diameter of 100mm. These wafers not only offer precise dimensions but also boast exceptional physical properties, making them an ideal choice in the semiconductor device field.

Our 4-inch silicon wafers feature ultra-low lattice mismatch, ensuring device stability and reliability. Their high thermal conductivity effectively dissipates heat, keeping devices cool even under high-load operation.

The low power consumption characteristic helps extend product lifespan while aligning with green and environmental sustainability goals. With excellent transient characteristics and a wide bandgap, these wafers are superior for manufacturing high-frequency, high-power electronic and optoelectronic devices. 

4h silicon wafer

4h sic wafer

4h silicon wafer