6 inch silicon wafer, an important material for microelectronics and radio frequency (RF) applications, are available in modest sizes and provide an ideal foundation for the fabrication of a wide range of high-performance electronic devices.

Key characteristics of SOI wafers include low parasitic capacitance, high isolation, excellent thermal stability, and radiation resistance. Silicon on Insulator (SOI) wafers have a unique three-layer structure that includes a top silicon layer, an intermediate buried oxygen layer (BOX layer), and an underlying silicon substrate.