epitaxial wafer
Epitaxial wafer : As specialized epitaxial wafer manufacturers in China, we are aware of your interest in epitaxial silicon wafer materials, which are photonic chip materials. In the following, we explain to you the actual position of wafer epitaxial layers in production through an overview of wafer epitaxial layers, materials for epitaxial layers and advantages of led epitaxial wafer.
epitaxial wafer
Overview of Epitaxial wafer
Epitaxial silicon wafer is a layer of “ultra-high purity” material formed by epitaxial growth technology on ultra-pure wafers. It is a key link in the photonic chip manufacturing process. Epitaxial layer makes the wafer maintain good purity, but also make more functions and characteristics can be shown.
Second, the sic epitaxial wafer materials Each material in the epitaxial layer of a wafer has its own unique physical and chemical properties to meet the needs of different application scenarios. Indium phosphide (InP) is an important wafer epitaxial layer material:
Indium phosphide (InP):
Indium phosphide is a semiconductor material used in high frequency power electronics . sic epitaxial wafer growth of indium phosphide material is a key material in the manufacture of high-performance electronic devices.
![epitaxial wafer](https://www.sapphire-wafer.net/wp-content/uploads/2024/06/epitaxial-wafer-1024x1024.jpg)
epitaxial wafer
Wafer epitaxial layer has significant advantages in semiconductor manufacturing, these advantages are mainly due to its material properties and growth technology.
The following is a detailed description of the advantages of the wafer epitaxial layer:
1. High material purity:
o Epitaxial growth technology can ensure that the wafer epitaxial layer has a very high purity, “ultra-high purity wafers, can reduce impurities and defects in the epitaxial layer.
We can adjust the conductivity, mobility and doping level, so as to realize your high standard of epitaxial wafer. This improves the performance and stability of electronic devices.
2. High lattice matching:
Epitaxial layer technology allows high quality lattice matching between semiconductor materials with different lattice constants, which helps to improve the mobility of the carrier electrons and holes and reduce their scattering losses in the device, thus improving overall performance.
3. Controlled growth rate:
o By integrating different materials on a single chip and precisely controlling the thickness, composition, and doping of the film on an atomic scale, semiconductor devices with new properties and functionalities can be created.
Since the epitaxial layer can be grown in a controlled environment, the growth rate and composition of the epitaxial layer can be precisely controlled by adjusting the temperature, pressure, gas flow, etc., to improve lot-to-lot and device-to-device consistency.
4. Excellent surface quality:
The epitaxial layer has high flatness, high cleanliness, and it is almost defect-free film, which helps to reduce surface defects and improve device performance.
Epitaxially treated substrates are significantly flatter than mechanically polished wafers.
5. Customization and flexibility:
o By selecting epitaxial layers with different materials and parameters for high frequency electronics, optoelectronics or solar cells, epitaxial layer technology offers a high degree of customization and flexibility, allowing us to select the right material and adjust the parameters according to the specific needs of the application.
6. Large size:
We can provide the formation of large-size single wafers on wafers to meet your different types of production needs.
7. Improved device performance:
o Highly consistent device performance can be achieved, reducing the obstruction of current in the device, improving lot-to-lot and device-to-device consistency, and greatly improving the efficiency of the device.
We sincerely welcome you to inquire about our epitaxial silicon wafer to help you better complete your project by selecting large size epitaxial layers.
Physical characteristics of Sapphire ingot/boule/material:
thermal expansion | 6.7*10-6 // C-axis 5.0*10-6± C-axis |
electrical resistivity | 1011Ω/cm at 500℃, 106Ω/cm at 1000℃, 103Ω/cm at 2000℃ |
refractive index | 1.769 // C-axis,1.760 ± C-axis, 0.5893um |
visible light | beyond compare |
surface roughness | ≤5A |
orientation | <0001>、<11-20>、<1-102>、<10-10>±0.2° |
Product attribute
weight | 80kg/200kg/400kg |
size | special orientation and size chips can be customized according to customer requirements |
color | transparent |
crystal lattice | hexagonal single crystal |
purity | 99.999% Monocrystaline Al2O3 |
melting point | 2050℃ |
hardness | Mohs9,knoop hardness ≥1700kg/mm2 |
elastic modulus | 3.5*106 to 3.9*106kg/cm2 |
compression strength | 2.1*104 kg/cm2 |
tensile strength | 1.9*103 kg/cm2 |