sic epitaxy
Sic epitaxy: Silicon carbide epitaxy is a semiconductor material processing technique that improves the performance of silicon carbide devices by growing one or more layers of higher purity silicon carbide material on a silicon carbide substrate.
Definition and Process: Silicon carbide epitaxy is a technique for growing one or more layers of higher purity silicon carbide material on a silicon carbide substrate. Depending on the type of epitaxial material grown on different types of substrates, it can be categorized as homogeneous or heterogeneous epitaxy.
In this process, the silicon carbide substrate is exposed to high temperatures while being coated with a layer of silicon carbide source material. This layer of material then evaporates at high temperature and solidifies on the silicon carbide substrate to form an epitaxial layer.
The quality of the epitaxial layer has a decisive impact on the performance of the device, especially in the silicon carbide industry chain, where the value of the epitaxial is high.
sic epitaxy
Main Advantages: Improvement of Material Quality: Through epitaxial growth, a silicon carbide film can be formed on the substrate by chemical reaction deposited on the SiC substrate at high temperature, which can be operated under extreme conditions such as high temperature and high frequency without any significant degradation of performance.
1. High thermal conductivity: The high thermal conductivity of silicon carbide epitaxial materials can quickly conduct heat away from the inside of the device, thus maintaining the stability and reliability of the device.
2. High electron saturation mobility makes silicon carbide epitaxial materials have stable performance in high-frequency and high-power applications.
3. Improve the neatness of lattice alignment. Compared with direct cutting of SiC blocks, epitaxial growth can achieve better crystal quality and lower defect density.
4. Precise control of doping and thickness: Especially in environments such as high temperature, high pressure and high frequency. This technique can precisely control the doping type and concentration of the epitaxial layer.
5. Resource saving: Compared to direct cutting of SiC blocks, mass production can be realized by epitaxial SiC on substrate, which improves production efficiency and reduces manufacturing cost.
6. SiC epitaxy can improve the performance of SiC devices by utilizing fumed compounds containing both silicon and carbon elements.
7. Value Factor: Epitaxy of SiC on a substrate allows for mass production, increased productivity, and reduced manufacturing costs.
8. Silicon carbide epitaxy technology will have a broader application prospect.
The application of silicon carbide epitaxy in power semiconductors can improve device performance, customize growth and increase production efficiency, improve device conductivity and voltage resistance, and thus increase the power density and efficiency of the device.
