silicon carbide manufacturing process
Silicon carbide materials have attracted much attention in the field of microelectronics due to their high bandwidth, high thermal stability and thermal conductivity, and high breakdown electric field strength.
Especially in the field of 5G communication, the application of silicon carbide double-sided polished plate not only meets the demand for high-frequency, high-speed and high-power transmission, but also plays a key role in improving the overall performance of the system and reducing energy consumption.
Power semiconductor field:
o Silicon carbide materials can be applied to power semiconductor devices, such as rectifier diodes and thyristors, in the fields of electric vehicles and photovoltaic power generation.
These devices require a smaller heat dissipation area at high power output, and silicon carbide materials have high thermal conductivity and low heat loss, which can make the devices operate at lower temperatures and improve the efficiency and reliability of the devices.
silicon carbide manufacturing process
In conclusion, the application of 4-inch high-purity semi-insulated silicon carbide double-sided polished plate and its nitride thin film technology not only brings significant performance enhancement in the field of 5G
communication, but also injects new vitality into the development of microelectronic devices.
We will continue to pay attention to the industry dynamics and technology development, to provide customers with more high-performance, high-reliability solutions.
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