Silicon carbide materials have attracted much attention in the field of microelectronics due to their high bandwidth, high thermal stability and thermal conductivity, and high breakdown electric field strength.

Especially in the field of 5G communication, the application of silicon carbide double-sided polished plate not only meets the demand for high-frequency, high-speed and high-power transmission, but also plays a key role in improving the overall performance of the system and reducing energy consumption.
Power semiconductor field:
o Silicon carbide materials can be applied to power semiconductor devices, such as rectifier diodes and thyristors, in the fields of electric vehicles and photovoltaic power generation.

 These devices require a smaller heat dissipation area at high power output, and silicon carbide materials have high thermal conductivity and low heat loss, which can make the devices operate at lower temperatures and improve the efficiency and reliability of the devices.