silicon carbide substrate
Scarcity of 8-inch SiC seed crystals in the market
8-inch SiC seed crystals, as the key material for growing SiC single crystals by PVT method, are extremely scarce in the market.
We are able to provide customers with high quality 8-inch SiC seed crystals by virtue of our close cooperation with Chinese silicon carbide factories and rich industry experience. Please feel free to contact us for further information.
silicon carbide substrate
When we talk about ultra-thin and ultra-thick silicon wafers for microelectronic applications, we cannot ignore the technical challenges and market potential behind them. Next, we will explore the characteristics and technical advantages of these wafers and their specific applications in different fields.
I. Technical characteristics and advantages of ultra-thin silicon wafers
Ultra-thin silicon wafers have shown unique advantages in the field of microelectronics due to their extreme thinness and excellent flexibility.
These wafers are not only characterized by high integration and low power consumption, but also capable of achieving higher response speed and finer manipulation.
This makes ultra-thin silicon wafers promising for applications in MEMS, advanced CMOS logic, and other fields.
Although ultra-thick polished silicon wafers are a breakthrough in terms of standard commercial thickness, they still face a number of technical challenges in the preparation process.
